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| ST 2SC2901 NPN Silicon Epitaxial Planar Transistor for general purpose amplifier and high speed switching applications. The transistor is subdivided into two groups L and K, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. Features High frequency current gain High speed switching Small output capacitance TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25 OC) Symbol Collector Base Voltage Collector Emitter Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Collector Current (10s pulse) Power Dissipation Junction Temperature Storage Temperature Range VCBO VCES VCEO VEBO IC IC Ptot Tj TS Value 40 40 15 5 200 500 600 150 -55 to+150 Unit V V V V mA mA mW O O C C SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 07/08/2003 ST 2SC2901 Characteristics at Tamb=25 OC Symbol DC Current Gain* at VCE=1V, IC=10mA Current Gain Group L K Collector Cutoff Current at VCB=20V Emitter Cutoff Current at VEB=3V Collector Saturation Voltage* at IC=10mA, IB=1mA Base Saturation Voltage* at IC=10mA, IB=1mA Turn-on Time at VCC=3V, IC=10mA, IB1=3mA, -VBE=1.5V Storage Time at IC=10mA, IB1= -IB2=10mA Turn-off Time at VCC=3V, IC=10mA, IB1=3mA, -IB2=1.5mA Gain Bandwidth Product at VCE=10V, -IE=10mA, f=100MHz Output Capacitance at VCB=5V, f=1MHz COB 1.8 4 pF fT 500 750 MHz toff 12 18 ns tstg 6 13 ns ton 8 12 ns VBE(sat) 0.8 0.85 V VCE(sat) 0.15 0.25 V IEBO 0.1 A ICBO 0.1 A hFE hFE 40 100 120 200 Min. Typ. Max. Unit *Pulsed PW350s, Duty Cycle2% SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 07/08/2003 ST 2SC2901 Collector current vs. collector emitter voltage 200 160 6 120 80 40 4 25 20 10 8 16 12 8 60 Collector current vs. collector emitter voltage 20 180 160 140 120 100 80 Ic (mA) 2 1 I B=0.5m A 0 0 0.4 0.8 1.2 1.6 2.0 Ic (mA) 4 40 IB=20 A 0 4 8 12 16 20 VCE (V) VCE (V) Total power dissipation vs. ambient temperature 800 DC current gain vs. collector current 1000 VCE=1V Total power dissipation, mW 600 25 C Ta=75 C hFE 400 100 200 -25 C 0 10 50 100 150 200 0.1 1 10 100 Ambient temperature Ta ( C) I C, mA Input and output capacitance vs. reverse voltage 30 f=1MHz IE=0(Cob) IC=0(Cib) Base and collector saturation voltage vs. collector current 3 IC/IB=10 1 VBE(sat) 10 VCE(sat), V VBE(sat), V Cob, pF Cib, pF Ta=75 C -25 C VCE(sat) 25 C Cib Cob 1 0.1 Ta=75 C -25 C 25 C 0.01 0.1 1 10 100 0.1 0.1 1 10 100 I C, mA VCB, V VEB, V SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 07/08/2003 ST 2SC2901 Gain bandwidth product vs. emitter current 10000 VCE=10V Switching time vs. collector current 100 VCC=10V I C/IB=10 I B1= -IB2 VBB= -5V 1000 fT, (MHz) tsw, ns tr 10 tf td 100 tstg 10 1 -0.1 -1 -10 -100 2 10 100 200 I E, mA I C, mA SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 07/08/2003 |
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